Semiconductor Devices Problems - Numerical 01

In an intrinsic semiconductor, the energy gap E_g is 1 eV. Its hole mobility is very much smaller than electron mobility and is independent of temperature. What is the ratio between conductivity at 600 K and that at 300 K? Assume that the temperature dependence of intrinsic carrier concentration n_i is expressed as

n_i = n_o exp [ -Eg/2kT],

where n_o is a constant and k is Boltzmann constant [=8.62 x 10^-⁵ eV/K]

Sub Topics

Suggested answer:

Suggested answer:

It is given that m_e >> m_h

n_e = n_h = n_i, for intrinsic semiconductor

and s = n_o e m_e . exp[-E_g/2kT]

= s_o exp [-E_g/2kT] [s_o=n_oem_e = constant]